Items tagged with 3D TSV

Samsung today said it has developed the industry's first 12-layer 3D-TSV (Through Silicon Via) chip packaging technology, calling it "one of the most challenging packaging technologies for mass production of high performance chips." And that is precisely what it will be used for—it will enable Samsung to mass produce 24GB high bandwidth memory (HBM) sooner than later. What makes this chip packaging technology so challenging is the pinpoint accuracy it requires in order to vertically attach a dozen DRAM chips in a tiny three-dimensional configuration. These configurations consist of 60,000 TSV holes, each of which is just one-twentieth the width of a single strand of human hair. "The thickness... Read more...
Samsung Electronics has announced the creation of a new 32GB RDIMM with 3D TSV technology. The RDIMM (registered dual inline memory module) was made by stacking DDR3 SDRAMs that were manufactured by using 30nm-class process technology, and those SDRAMs were connected using the TSV (through silicon via) technology. This new module can provide speeds of up to 1,333Mbps and has a power consumption of 4.5 watts per hour, which is more than 30% smaller than the power consumption of an LRDIMM (load-reduced dual-inline memory module) using DDR3 SDRAMs made with the same technology as above. The modules are targeted for high-end applications such as server operation. Samsung had previously announced... Read more...