SAMSUNG Introduces 60nm-class Processing for 2Gb DDR2 DRAM
Seoul, Korea - September 12, 2007 : Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has developed the industry's first 60 nanometer (nm)-class 2 gigabit DDR2 DRAM and will begin mass producing it later this year.
Compared with 80nm 2Gb DDR2, the 60 nanometer (nm)-class with a speed of 800 megabits per second has improved DRAM performance up to 20%. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40 percent using the finer 60nm-class process technology.
Besides its greater efficiencies, the new 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions, which will accelerate the move toward higher densities in high-end market segments.
The new high-performance, high-capacity DRAM is well suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
The 2Gb DDR2 device cuts in half the number of components used in a 1Gb-based 8GB (four-rank) module, which consists of 72 1Gb chips. The new solution consumes approximately 30% less power than a module of the same capacity using 1Gb chips. The lower power level generates less heat, improving reliability and minimizing cooling requirements...