The smartphone world never stops spinning, and the next generation of handsets will boast more storage and much faster access to that storage than current devices. We know this because Samsung has started mass product what it claims is the industry's first 512-gigabyte embedded Universal Flash Storage (eUFS) 3.0 for next-gen mobile devices.
"Beginning mass production of our eUFS 3.0 lineup gives us a great advantage in the next-generation mobile market to which we are bringing a memory read speed that was before only available on ultra-slim laptops," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics. "As we expand our eUFS 3.0 offerings, including a 1-Terabyte (TB) version later this year, we expect to play a major role in accelerating momentum within the premium mobile market."
Samsung said it was able to double the speed of its eUFS storage with its newest chips, which is impressive considering that eUFS 1.4 delivered a 1.4 times bump in performance when it was introduced four years ago.
The 512GB eUFS 3.0 package consists of eight stacked fifth-generation 512-gigabit (Gb) V-NAND dies with an integrated controller that Samsung says is tuned for performance. It is rated to deliver up to 2,100MB/s of sequential read performance, which is on par with some mainstream desktop NVMe solid state drives (though slower than the top performing ones).
Read performance hasn't scaled quite as high—Samsung is touting a 50 percent performance bump to 410MB/s, which is more on part with SATA-based SSDs. In a phone, though, these read and write times are exceptional compared to today's storage systems.
Samsung will be launching 512GB and 128GB eUFS 3.0 solutions this month, followed by 1TB and 256GB products in the second half of the year.