The latest news coming from MyDrivers suggests that the Snapdragon 845 will be still be based on a 10nm Low Power Early (LPE) FinFET process instead of Samsung’s second-generation Low Power Plus (LPP) process, which seems suspect. “With our successful 10LPE production experience, we have commenced production of the 10LPP to maintain our leadership in the advanced-node foundry market,” said Ryan Lee, Vice President of Foundry Marketing at Samsung Electronics back in April.
“10LPP will be one of our key process offerings for high performance mobile, computing and network applications, and Samsung will continue to offer the most advanced logic process technology.”
An earlier report suggested that Qualcomm might even be eyeing a 7nm process for the Snapdragon 845, but that seems a bit far-fetched at this point.
The Snapdragon 845 is rumored to feature four [unannounced] Cortex A75 cores paired with four low-power Cortex A53 cores and Adreno 630 graphics. The Snapdragon X20 LTE modem will be incorporated, which provides Cat 18 downloads speeds of 1.2Gbps. There’s also support for UFS 2.1 storage and LPDDR4X memory, which should improve performance and efficiency.
Of course, this is all just speculation at this point, though nothing seems too far-fetched based on the specs we’ve been given. And if the report is accurate, we should see the first devices sporting Snapdragon 845 arrive during the first quarter of 2018. That seems like prime positioning for the inevitable Samsung Galaxy S9 and Galaxy S9+.