Items tagged with FeRAM
Information on a supposed DRAM breakthrough has been running hot across the wires, but the press release from Semiconductor Research Corporation (SRC) that's sparked techie interest across the Internet is a tad misleading. There's nothing factually incorrect regarding the group's achievement (at least not as far as we know), but the gap between where we are today and a commercially viable FeDRAM design is much, much wider than implied. The PR states that the Semiconductor Research Corporation and Yale University have jointly developed "a new DRAM cell using ferroelectric layers that could significantly increase the technological and market competitiveness for DRAM technology." "According to early...
Read more...
What would life be like if you had access to random access memory that coupled the fast operating characteristics of DRAM with flash memory's ability to retain data while powered off? Pretty darn amazing, we imagine. Believe it or not, such a contraption is already in the works, and it has been for quite some while. Today, Toshiba is announcing a breakthrough in the development of FeRAM, or Ferroelectric Random Access Memory, which could one day make our current memory modules and even SSDs look like antiquated pieces of technology.At the International Solid-State Circuits Conference 2009 in San Francisco -- the same venue at which the PCMOS microchip was unveiled -- Toshiba is introducing a...
Read more...
