Items tagged with Z-RAM

Information on a supposed DRAM breakthrough has been running hot across the wires, but the press release from Semiconductor Research Corporation (SRC) that's sparked techie interest across the Internet is a tad misleading. There's nothing factually incorrect regarding the group's achievement (at least not as far as we know), but the gap between where we are today and a commercially viable FeDRAM design is much, much wider than implied. The PR states that the Semiconductor Research Corporation and Yale University have jointly developed "a new DRAM cell using ferroelectric layers that could significantly... Read more...
Michael from Lost Circuits just posted an interview with Jeff Lewis, VP of Worldwide Marketing at ISi regarding the technology behind Z-RAM. Interesting reading to say the least. "Conventional DRAMs are made of capacitors and transistors where the capacitor stores the data and the transistor opens or closes the passgate for the data to enter the system. Innovative Silicon Inc (ISi) have turned the difficulties of manufacturing this standard memory type on an SOI process into a feature by leaving out the capacitor - and guess what, it still works.... Read more...