Samsung Begins Mass Production Of 40nm RAM Modules - HotHardware
Samsung Begins Mass Production Of 40nm RAM Modules

Samsung Begins Mass Production Of 40nm RAM Modules

"Samsung" and "Green Memory" have actually been uttered in the same phrase before, and with more and more focus being put on just how much energy our computer memory consumes, it makes sense to see the company following up on their 30nm technology with this: the industry's first volume 40nm-class Gigabit DDR3.

In other words, mass production has begun on this stuff, which promises to offer high capacities with lower power demands. More memory on fewer DIMMs? Sign us up. According to the company this 4Gb-based module "can save 35 percent in power consumption," and this  raises the amount of memory for use in servers to 32Gigabytes (GB) per module, which is twice the maximum density achieved with modules based on 2Gb components.

This is a pretty big introduction for Samsung, as they now plan to move around 90% of their total DDR DRAM production to 40nm-class process technology. In notebook news, the new 4Gb DDR3 device also raises SODIMM density to 8GB, which means your next netbook could theoretically hold 8GB of RAM. Both 1.5V and 1.35V specifications are covered, with available modules including 16GB and 32GB RDIMMs and 8GB SODIMMs.


Samsung Expands Green Line-up

with Industry’s First Volume 40nm-class 4Gigabit DDR3

SEOUL, Korea - February 24, 2010 Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first low-power (green) four gigabit (Gb) DDR3 devices using 40 nanometer (nm) class process technology. The high-density memory is expected to bring significant power savings to data centers, server systems and high-end notebooks.

When our 40nm-class DDR3 was first introduced last July, we were well ahead of the curve for high density, high performance DDR3,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. Now, in just seven more months, we have introduced an ultra-low power Green Memorythe 4Gb DDR3, which is double the density of its predecessor. At a module density of 16-gigabyte (GB), the 4Gb based module can save 35 percent in power consumption, to support customer requirements for more energy-efficient designs.

Samsung’s 40nm-class Green DDR3 is optimized to enhance energy-efficiency ratings for servers seeking to comply with or exceed new Energy Star power consumption specifications.

Production of the 4Gb DDR3 raises the amount of memory for use in servers to 32Gigabytes (GB) per module, which is twice the maximum density achieved with modules based on 2Gb components.

With the start of volume 4Gb DDR3 production, Samsung plans to migrate more than 90 percent of its DDR DRAM production to 40nm-class process technology, to provide its customers with the most cost-efficient DRAM component available today, at the same time solidifying its market-leading position.

Today, servers are equipped with an average of six registered dual in-line memory module (RDIMMs) sockets per CPU, with which up to a 96GB DRAM capacity can be accommodated. Power consumption varies depending on the component featured. A module based on 60nm-class 1Gb DDR2 components consumes 210W, while a 40nm-class 2Gb DDR3-based module consumes 55W, representing an approximate 75 percent savings.  However, the new 40nm-class 4Gb DDR3-based module consumes a mere 36W, which represents about 83percent savings over the 60nm-class 1Gb DDR2 module. With growing concern about energy costs in data centers, these memory power savings translate into an overall reduction in server power of 10 percent per system.

By applying Samsungs 40nm 4Gb DDR3-based modules to existing server systems, DRAM density can raised at least two-fold and system life-time can be extended sharply to prolong server life span in reducing new system investment.

The 4Gb DDR3 raises the small outline dual inline memory module (SoDIMM) density to 8GB.  This enables a system level density of up to 16GB for two socket modes, or 32GB for four socket models, which is expected to meet much of the growing demand for high-performance notebooks with advanced graphics.

The new 4Gb DDR3 supports both 1.5V and 1.35V specifications. Available memory modules include 16 and 32GB RDIMMs and 8GB SoDIMMs with a 1.6-Gigabit per second (Gbps) performance rate.

 

For more information about Samsung Green DDR3, visit www.SamsungDDR3.com.

About Samsung Electronics Co., Ltd.

Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2008 consolidated sales of US$96 billion. Employing approximately 164,600 people in 179 offices across 61 countries, the company consists of seven independently operated business units: Visual Display, Mobile Communications, Telecommunication Systems, Digital Appliances, IT Solutions, Semiconductor and LCD. Recognized as one of the fastest growing global brands, Samsung Electronics is a leading producer of digital TVs, memory chips, mobile phones and TFT-LCDs. For more information, please visit www.samsung.com.

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I am confused here. How does a memory company upgrade there 30nm product to a 40nm product. From what I know that is supposed to go the other way, and I am pretty sure it does. I think it's supposed to be 60nm upgraded to 40.

Either way I wonder what the timing capabilities are? It says that 90 percent of there future products will be produced with this upgraded technology. Samsung also provides product modules of memory to a wide array of memory names (very wide if I'm not

incorrect here).

Either way double capacity is very nice indeed, especially if some of this product is capable of high speed. Currently I use 6,6,6,18 at 1333 (which is Mushkin blackline and capable of 7,7,7,20 at 1600) on my desk top, but more responsive at tighter timing, while using less voltage, and running cooler.

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I also wonder whats and when we will start seeing the next memory standard as well as what it will be (DDR4 or 5).

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Calm down bro, your mixing up 30nm DDR NAND (ie Flash or Solid State) with DDR RAM (Dynamic Memory, ie DDR, DDR2, DDR3). The current standard for DDR RAM is 50nm. The current standard for NAND is 30nm, though Micron and Intel are ramping up production of 25nm DDR NAND.

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Additional comment:  Actually 40nm DDR Ram has been around from Samsung for a while now.  It was just low production at 2Gib density.

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Great! I wonder when DDR3 prices will be cheaper than DDR2 just like how DDR2 is on average cheaper than DDR right now. Big Smile

 

I really like how many companies are hoping onto the green wagon. Hard drive manufacturers, processor manufacturers, and now RAM. Even though it might not amount to much to everyday consumers like us, they are great for large companies.

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It's like a runaway train. Advances come faster and faster every day.

I applaud it too. I'd love to have 16GB, or 32GB in all of my boxes rather than 8GB.

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