Intel, after recently reviewing its memory technology roadmap, speculated that phase change memory (PCM) will possibly be available by the end of the year. Phase change memory can run faster and be manufactured smaller then DRAM memory and as a result Intel believes it may possibly one day replace flash memory. Flash memory can become unreliable after as many as 10,000 write cycles where as phase change memory can go through as many as 100 million write cycles before a noticeable degradation.
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