Samsung Develops DDR4 Memory Using 30nm-Class Technology - HotHardware
Samsung Develops DDR4 Memory Using 30nm-Class Technology

Samsung Develops DDR4 Memory Using 30nm-Class Technology

Consumers may see the end-product side of Samsung the most. Things like Samsung notebooks, Samsung HDTVs, Samsung hard drives. But Samsung is actually much more than what you see at Best Buy. The company has huge investments in the memory sector, and it's clear by the sheer quantity of news coming out of their semiconductor department that the gears really are turning.

This week, the company announced the development of the industry's first DDR4 DRAM using 30nm-class technology. Dong Soo Jun, president, memory division, Samsung Electronics noted the following: "The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application." Of course, the primary number used in standard DIMMs today is DDR3, and many high-end GPUs use GDDR5 video memory.

But the new DDR4 module that has been developed here can chieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module. The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data. By employing new circuit architecture, Samsung’s DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today’s typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.

Samsung is expected to work with a number of server makers to insure completion of JEDEC standardization of DDR4 technologies in the second half of this year, and hopefully we'll see these floating to retail shortly thereafter.


Samsung Develops Industry’s First DDR4 DRAM, Using 30nm Class Technology

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd, a global leader in advanced semiconductor technology solutions, announced today that it completed development of the industry’s first DDR4 DRAM module last month, using 30 nanometer (nm) class* process technology.

    “Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year”

“Samsung has been actively supporting the IT industry with our green memory initiative by coming up with eco-friendly, innovative memory products providing higher performance and power efficiency every year,” said Dong Soo Jun, president, memory division, Samsung Electronics. “The new DDR4 DRAM will build even greater confidence in our cutting-edge green memory, particularly when we introduce four-gigabit (Gb) DDR4-based products using next generation process technology for mainstream application.”

The new DDR4 DRAM module can achieve data transfer rates of 2.133 gigabits per second (Gbps) at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent 30nm-class* process technology, with speeds of up to 1.6Gbps. When applied to a notebook, it reduces power consumption by 40 percent compared to a 1.5V DDR3 module.

The module makes use of Pseudo Open Drain (POD), a new technology that has been adapted to high-performance graphic DRAM to allow DDR4 DRAM to consume just half the electric current of DDR3 when reading and writing data.

By employing new circuit architecture, Samsung’s DDR4 will be able to run from 1.6 up to 3.2Gbps, compared to today’s typical speeds of 1.6Gbps for DDR3 and 800Mbps for DDR2.

Late last month, Samsung provided 1.2V 2 gigabyte (2GB) DDR4 unbuffered dual in-line memory modules (UDIMM) to a controller maker for testing.

Samsung now plans to work closely with a number of server makers to help insure completion of JEDEC standardization of DDR4 technologies in the second half of this year.

Samsung has been leading the advancement of DRAM technology ever since it developed the industry’s first DDR DRAM in 1997. In 2001, it introduced the first DDR2 DRAM, and in 2005, announced the first DDR3 DRAM using 80nm-class technology.

For more information about Samsung Green memory, visit www.samsung.com/GreenMemory. 
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The memory tier of the industry is actually one of the more important ones. I am surprised they went DDR4 on this as they have already developed DDR5 and I think 6. Of course the only thing that makes much use of DDR5 is AMD GPU's, and I have not seen any version of DDR above 5 on the market for anything period although I was actually under the impression Samsung had actually made DDR6.

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Your confused bro. GDDR is not the same as DDR. GDDR5 is actually highly tweaked DDR3, the same as GDDR4 is. GDDR2 and GDDR3 were both tweaked versions of DDR2. Also AMD is not the only one shipping GDDR5 products. The current high end Nvidia cards (470, 480, 570, 580) all use GDDR5.

Just remember, if you see GDDR it is just a modified version of common DDR designed for high bandwidth applications. DDR3 is the current most advanced on the market.

If we want to see a nice little jump in memory system performance we need to move on from DDR to QDR. The problem with DDR is that it is half duplex. You can ether read or write to it, not both at the same time. Plus there is a delay in switching from one to the other.

That is one of the reasons AMD split their memory controller into two 64bit pipes. You can have one reading and one writing (though only to dimms plugged into their sockets).

QDR while actually not clocking any faster than DDR and having the exact same max transfer rate, is full duplex. No advantage if your doing just reads or just writes, but as soon as you start mixing those it really starts pulling away in performance. Both at max speed, no turn-around delay.

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